Osram Opto Semiconductors has introduced a new generation of white Micro SideLEDs with a height of only 0.8mm and a significant increase in brightness with ESD (electrostatic discharge) protection in the form of an integrated diode. InGaN (Indium Gallium Nitride) chips are fabricated using thin film technology. The Micro SideLED operates at 20mA and has a brightness of more than 1000mcd, which is about 200mcd higher than the previous record. The encapsulating material is made of polyfluorenone, which is slower than the epoxy resin used before, and can increase the life of the LED by ten times. And it meets the requirements of the EU WEEE and RoHs directives. This SMT (Surface Mount Technology) module is by far the smallest module with diffractive features and integrated ESD protection. The main applications of the white Micro SideLED are small mobile terminals such as mobile phones, PDAs and writing devices. These miniature LEDs also integrate the common ESD diodes that activate the flat display into the package, which means that component manufacturers such as display screens do not need to take any other costly and time-consuming measures (such as equipped with anti-static sites). Thereby speeding up the production process.